IRL620STRR【PDF 1/10 页】MOSFET N-CH 200V 5.2A D2PAK

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IRL620S, SiHL620S

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

FEATURES

? Halogen-free According to IEC 61249-2-21

V DS (V)

R DS(on) ( ? )

Q g (Max.) (nC)

Q gs (nC)

Q gd (nC)

Configuration

D 2 PAK (TO-263)

V GS = 10 V

200

2.9

9.6

Single

0.80

Definition

? Surface Mount

? Available in Tape and Reel

? Dynamic dV/dt Rating

? Repetitive Avalanche Rated

? Logic Level Gate Drive

? R DS(on) Specified at V GS = 4 V and 5 V

? Fast Switching

? Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design,

low on-resistance and

cost-effectiveness.

The D 2 PAK (TO-263) is a surface mount power package

capable of accommodating die sizes up to HEX-4. It

G D

N-Channel MOSFET

provides the highest power capability and the lowest

possible on- resistance in any existing surface mount

package. The D 2 PAK (TO-263) is suitable for high current

applications because of its low internal connection

resistance and can dissipate up to 2.0 W in a typical surface

mount application.

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free

Lead (Pb)-free IRL620STRLPbF

D 2 PAK (TO-263)

SiHL620S-GE3

IRL620SPbF

SiHL620S-E3

D 2 PAK (TO-263)

SiHL620STRL-GE3 a

IRL620STRLPbF a

SiHL620STL-E3 a

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS (T C = 25 °C, unless otherwise noted)

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

SYMBOL

V DS

V GS

LIMIT

200

± 10

UNIT

Continuous Drain Current

Current a

Pulsed Drain

V GS at 5 V

T C = 25 °C

T C = 100 °C

I D

I DM

5.2

3.3

Linear Derating Factor

Linear Derating Factor (PCB Mount) e

0.40

0.025

W/°C

Single Pulse Avalanche Energy b

Repetitive Avalanche Current a

Repetitive Avalanche Energy a

Maximum Power Dissipation T C = 25 °C

Maximum Power Dissipation (PCB Mount) e T A = 25 °C

E AS

I AR

E AR

P D

125

5.2

5.0

3.1

Peak Diode Recovery dV/dt

dV/dt

5.0

V/ns

Operating Junction and Storage Temperature Range T J , T stg

Soldering Recommendations (Peak Temperature) for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V DD = 50 V, starting T J = 25 °C, L = 6.9 mH, R g = 25 ? , I AS = 5.2 A (see fig. 12).

c. I SD ? 5.2 A, dI/dt ? 95 A/μs, V DD ? V DS , T J ? 150 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91302

S11-1054-Rev. C, 30-May-11

- 55 to + 150

300 d

°C

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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